Micro light emitting diode

A micro light emitting diode comprising:

• a first light emitting unit which includes a first lower semiconductor layer, a first light emitting layer disposed on a top of the first lower semiconductor layer and emitting a first light ray, a first upper semiconductor layer arranged at a top of the first light emitting layer, a first reflective layer mounted on a top of the first upper semiconductor layer, a first passivation layer disposed on a top of the first reflective layer and covering the first upper semiconductor layer, a first electrode inserted through the first passivation layer and the first reflective layer and electrically connected with the first upper semiconductor layer, and a first common electrode inserted through the first passivation layer and electrically connected with the first lower semiconductor layer;
• a second light emitting unit which includes a second lower semiconductor layer disposed on a top of the first passivation layer and provided with a groove in which the first electrode is mounted and located at an inner side thereof, a second light emitting layer arranged at a top of a part of the second lower semiconductor layer and emitting a second light ray, a second upper semiconductor layer mounted on a top of the second light emitting layer, a second reflective layer arranged at a top of the second upper semiconductor layer, a second passivation layer disposed on a top of the second reflective layer and covering one side of the second upper semiconductor layer and the other part of the second lower semiconductor layer, a second electrode inserted through the second passivation layer and the second reflective layer and electrically connected with the second upper semiconductor layer, and a second common electrode inserted through the second passivation layer and electrically connected with the second lower semiconductor layer;
• a third light emitting unit which includes a third lower semiconductor layer located above the second passivation layer with an interval therebetween, a third light emitting layer disposed on a top of the third lower semiconductor layer and emitting a third light ray, a third upper semiconductor layer mounted on a top of the third light emitting layer, a third electrode electrically connected with the third upper semiconductor layer, and a third common electrode electrically connected with the third lower semiconductor layer;
• and
• a substrate having a first connection point, a second connection point, a third connection point, and a common connection point which are disposed on a bottom of the substrate and spaced apart from one another;
• the first connection point, the second connection point, and the third connection point are respectively electrically connected with the second electrode, the first electrode, and the third electrode while the common connection point is electrically connected with the first common electrode, the second common electrode, and the third common electrode;
• wherein the third light emitting unit is disposed on one side of the first light emitting unit and the common connection point is arranged above the first light emitting unit.