Evaluation method for silicon carbide substrates
AssigneesKwansei Gakuin Educational Foundation, Toyota Tsusho Corporation
InventorsTadaaki Kaneko, Daichi Dojima
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Abstract
An object of the present invention is to provide a novel evaluation method suitable for evaluating a SiC substrate having a large diameter. The present invention is a method for evaluating a silicon carbide substrate, the method comprising an image acquisition step of acquiring an image by making an electron beam incident at an incident angle inclined with respect to a normal line of a {0001} plane of a silicon carbide substrate, wherein the incident angle is 10° or less.
Claims10
A method for evaluating a silicon carbide substrate, the method comprising an image acquisition step of acquiring an image by making an electron beam incident at an incident angle inclined with respect to a normal line of a {0001} plane of a silicon carbide substrate, wherein the incident angle is in a range between 7° and 9°.
A method for evaluating a silicon carbide substrate, the method comprising:
- an oxide film removal step of removing an oxide film of the silicon carbide substrate, and
- an image acquisition step of acquiring an image by making an electron beam incident at an incident angle inclined with respect to a normal line of a {0001} plane of a silicon carbide substrate;
- wherein the image acquisition step is performed after the oxide film removal step.
Dependencies are inferred from the claim text.