Oxide electrode-based 3-terminal neuromorphic synaptic device containing mobile ions, and method of manufacturing the same

A 3-terminal neuromorphic synaptic device comprising:

• a substrate;
• a source electrode and a drain electrode provided on the substrate to be spaced apart from each other;
• a channel area provided on the substrate to be electrically connected to the source electrode and the drain electrode, between the source electrode and the drain electrode;
• an ion transport layer provided on the channel area;
• a gate electrode provided on the ion transport layer, the gate electrode including a hollow cylinder;
• and
• a voltage application part configured to apply a gate voltage to the gate electrode,
• wherein the gate electrode is formed of at least one of an oxide-based material including mobile ions, a chalcogenide-based material including the mobile ions, and a nitride-based material including the mobile ions,
• wherein the ion transport layer includes:
• a first cylinder on which the hollow cylinder is provided;
• and
• a second cylinder provided on the first cylinder and surrounded by the hollow cylinder, a diameter of the second cylinder being less than a diameter of the first cylinder,
• wherein an outer diameter of the hollow cylinder is equal to the diameter of the first cylinder,
• wherein a height of the hollow cylinder is equal to a height of the second cylinder.