Optoelectronic devices and methods of making the same
AssigneeAlliance for Sustainable Energy, LLC
InventorsAxel Finn Palmstrom, Tomas Leijtens, Joseph Jonathan Berry
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Abstract
The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.
Claims21
A method comprising:
- exposing a first layer to at least one of ozone or ultraviolet light;
- and
- a first depositing by a vapor phase method of a second layer onto the first layer, wherein:
- the second layer comprises a metal oxide, and the second layer has a thickness between greater than zero nm and 500 nm.
A method comprising:
- exposing a first layer to at least one of ozone or ultraviolet light;
- and
- depositing a metal oxide layer onto the first layer, wherein:
- the depositing is performed using a vapor phase method,
- the first layer comprises at least one of poly(ethylenimine) ethoxylated, a fullerene, graphene, a carbon nanotube, a tin halide, a zinc halide, a titanium halide, a lead halide, choline chloride, an amino acid, glycine, 5-aminovaleric acid, methyl violagen, tyramine, an amine-containing compound, Si(OR1)3R2, SiX3R2, or PO3H2R2,
- R1 and R2 independently comprise at least one of an alkyl group, an amine, an amide, a carboxylic acid group, or a sulfide,
- X comprises a halogen,
- the first layer has a thickness between greater than zero nm and about 10 nm, and
- the metal oxide layer has a thickness between greater than zero nm and about 50 nm.
Dependencies are inferred from the claim text.