Transistor and method for fabricating the same

A method for fabricating a transistor, comprising:

• forming a low-dimensional material layer above a base,
• forming spacers on a surface of the low-dimensional material layer away from the base, the spacers being spaced apart from each other;
• forming a source and a drain on the surface of the low-dimensional material layer away from the base;
• forming a gate stack on the surface of the low-dimensional material layer away from the base and between the source and the drain,
• wherein the gate stack, the source and the drain are separated by the spacers, and in contact with the spacers, respectively;
• wherein forming the spacers comprises:
• depositing a protective material layer and an insulating material layer in sequence on the surface of the low-dimensional material layer away from the base;
• patterning the insulating material layer and the protective material layer in sequence to form a plurality of spaced first grooves to expose a first part of the low-dimensional material layer;
• growing a spacer material layer in the plurality of first grooves and on a surface of the insulating material layer away from the base;
• and
• patterning the spacer material layer to form the spacers, wherein:
• growing the spacer material layer is performed by at least one selected from atomic layer deposition, chemical vapor deposition and physical vapor deposition;
• and/or
• patterning the spacer material layer is performed by at least one selected from reactive ion etching and chemical mechanical polishing.