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US 12,575,168 B2Granted
RC IGBT, method of producing an RC IGBT and method of controlling a half bridge circuit
AssigneeInfineon Technologies AG
InventorRoman Baburske
Life of this patent
Estimating the term…
Abstract
An RC IGBT includes an active region with an IGBT section and a diode section. In a plurality of control trenches of the RC IGBT, there are a plurality of IGBT control electrodes and, electrically isolated from the IGBT control electrodes, a plurality of plasma control electrodes, each of the IGBT control electrodes and plasma control electrodes being electrically isolated from both load terminals of the RC IGBT. The IGBT section includes both a first subset of the IGBT control electrodes and a first subset of the plasma control electrodes. The diode section includes a second subset of the plasma control electrodes.
Claims25
An RC IGBT (reverse conducting insulated gate bipolar transistor), comprising:
- an active region with an IGBT section and a diode section;
- a semiconductor body having a first side and a second side;
- a first load terminal at the first side and a second load terminal at the second side;
- a plurality of control trenches arranged in parallel to each other along a first lateral direction and extending into the semiconductor body along a vertical direction, wherein the plurality of control trenches extend into both the IGBT section and the diode section;
- a plurality of IGBT mesas and a plurality of diode mesas in the semiconductor body, each of at least some of the IGBT mesas and diode mesas being laterally confined, along the first lateral direction, by at least one of the control trenches;
- and
- in the plurality of control trenches, a plurality of IGBT control electrodes configured to receive an IGBT control signal and, electrically isolated from the IGBT control electrodes, a plurality of plasma control electrodes configured to receive a plasma control signal different from the IGBT control signal, each of the IGBT control electrodes and plasma control electrodes being electrically isolated from both the first load terminal and the second load terminal and separated from the semiconductor body by a respective trench insulator formed along sidewalls and a bottom of the control trenches,
- wherein the IGBT section includes a first subset of the IGBT control electrodes, a first subset of the plasma control electrodes, and one or more source trenches having a source trench electrode electrically connected to the first load terminal and separated from the semiconductor body by a respective trench insulator formed along sidewalls and a bottom of the one or more source trenches,
- wherein the diode section includes a second subset of the plasma control electrodes, wherein
- the IGBT section includes a first subsection and a second subsection, wherein in the second subsection, at least one IGBT mesa is arranged adjacent to at least one of the control trenches that includes one of the plasma control electrodes, and wherein in the first subsection, at least one IGBT mesa is arranged adjacent to the at least one of the control trenches that includes at least one of the plasma control electrodes and at least one IGBT mesa is arranged adjacent to at least one of the control trenches that includes one of the IGBT control electrodes.
7 more elements
A method of producing an RC-IGBT, the method comprising:
- forming an active region with an IGBT section and a diode section;
- forming a first load terminal at a first side of a semiconductor body and a second load terminal at a second side of the semiconductor body;
- forming a plurality of control trenches arranged in parallel to each other along a first lateral direction and extending into the semiconductor body along a vertical direction, wherein the plurality of control trenches extend into both the IGBT section and the diode section;
- forming a plurality of IGBT mesas and a plurality of diode mesas in the semiconductor body, each of at least some of the IGBT mesas and diode mesas being laterally confined, along the first lateral direction, by at least one of the control trenches;
- and
- forming in the plurality of control trenches, a plurality of IGBT control electrodes configured to receive an IGBT control signal and, electrically isolated from the IGBT control electrodes, a plurality of plasma control electrodes configured to receive a plasma control signal different from the IGBT control signal, each of the IGBT control electrodes and the plasma control electrodes being electrically isolated from both the first load terminal and the second load terminal and separated from the semiconductor body by a respective trench insulator formed along sidewalls and a bottom of the control trenches,
- wherein the IGBT section includes a first subset of the IGBT control electrodes, a first subset of the plasma control electrodes, and one or more source trenches having a source trench electrode electrically connected to the first load terminal and separated from the semiconductor body by a respective trench insulator formed along sidewalls and a bottom of the one or more source trenches,
- wherein the diode section includes a second subset of the plasma control electrodes, wherein
- the IGBT section includes a first subsection and a second subsection, wherein in the second subsection, at least one IGBT mesa is arranged adjacent to at least one of the control trenches that includes one of the plasma control electrodes, and wherein in the first subsection, at least one IGBT mesa is arranged adjacent to the at least one of the control trenches that includes at least one of the plasma control electrodes and at least one IGBT mesa is arranged adjacent to at least one of the control trenches that includes one of the IGBT control electrodes.
6 more elements
Dependencies are inferred from the claim text.