Device with inverter functionality and tunable trigger voltage

A device comprising:

• a first transistor including a first primary gate and a first secondary gate, wherein the first transistor is a threshold voltage-programmable P-channel field effect transistor;
• a second transistor including a second primary gate and a second secondary gate, wherein the first transistor and the second transistor are connected in series by an interconnect, and wherein the second transistor is a threshold voltage-programmable N-channel field effect transistor;
• and
• an output node at the interconnect.

A device comprising:

• a first transistor including a first primary gate and a first secondary gate, wherein the first transistor is a threshold voltage-programmable P-channel field effect transistor;
• a second transistor including a second primary gate and a second secondary gate, wherein the second transistor is a threshold voltage-programmable N-channel field effect transistor;
• a first voltage input node connected to the first primary gate and to the second primary gate and further connected to receive a first input voltage;
• a second voltage input node connected to the first secondary gate and to the second secondary gate and further connected to receive a second input voltage;
• an interconnect connecting a first drain region of the first transistor to a second drain region of the second transistor;
• and
• an output node at the interconnect.