Laser device and laser projection apparatus

A laser device, comprising:

• a bottom plate;
• a frame body being disposed on the bottom plate, the frame body and the bottom plate forming an accommodating space;
• a heat sink being located on the bottom plate and in the accommodating space;
• and
• a light-emitting chip being located on a surface of the heat sink away from the bottom plate and being located in the accommodating space;
• wherein the light-emitting chip includes a plurality of first protrusions and/or a plurality of first depressions, the plurality of first protrusions and/or the plurality of first depressions are located on a first surface of the light-emitting chip, the first surface is fixed to the heat sink;
• the heat sink includes a plurality of second depressions and/or a plurality of second protrusions, the plurality of second depressions and/or the plurality of second protrusions are located on the surface of the heat sink, the surface of the heat sink is fixed to the light-emitting chip;
• the first surface of the light-emitting chip is in contact with the surface of the heat sink, the plurality of first protrusions are located in the plurality of second depressions, and the plurality of second protrusions are located in the plurality of first depressions;
• wherein the light-emitting chip includes a first electrode, a light-emitting layer and a second electrode that are sequentially stacked in a direction away from the bottom plate;
• the light-emitting layer includes a plurality of protrusions and/or a plurality of depressions, and the plurality of protrusions and/or the plurality of depressions are located on a surface of the light-emitting layer proximate to the bottom plate;
• and
• the first electrode includes the plurality of first protrusions and/or the plurality of first depressions, the plurality of first protrusions correspond to the plurality of protrusions in the light-emitting layer, and the plurality of first depressions correspond to the plurality of depressions in the light-emitting layer;
• wherein the light-emitting layer includes an insulating layer, a second semiconductor layer, an active layer, a first semiconductor layer and a substrate that are sequentially stacked in the direction away from the bottom plate;
• the second semiconductor layer includes the plurality of protrusions and/or the plurality of depressions, and the plurality of protrusions and/or the plurality of depressions are located on a surface of the second semiconductor layer proximate to the bottom plate;
• and
• the first electrode is located on a surface of the insulating layer proximate to the bottom plate, and the first electrode in contact with the second semiconductor layer;
• wherein the second semiconductor layer further includes a protruding portion, and the protruding portion is located on a side of the second semiconductor layer proximate to the bottom plate;
• a surface of the second semiconductor layer proximate to the bottom plate includes a first region and a second region, a surface of the protruding portion proximate to the bottom plate defines the second region, a remaining portion of the surface of the second semiconductor layer proximate to the bottom plate other than the second region includes the first region;
• the plurality of protrusions and the plurality of depressions are provided on the surface of the protruding portion proximate to the bottom plate;
• and
• the insulating layer covers the first region but not the second region, and a laser beam emitted by the light-emitting chip exits from the protruding portion.