Bonding structure
AssigneeTeknologian tutkimuskeskus VTT Oy
InventorJae-Wung Lee
Life of this patent
Estimating the term…
Abstract
According to an example aspect of the present invention, there is provided a bonding structure for forming at least one electrical connection between an optoelectronic component and a photonic substrate. The bonding structure comprises a pillar structure between the optoelectronic component and the photonic substrate, and a bonding layer comprising bonding material on the pillar structure. The pillar structure for at least one individual electrical connection comprises at least two portions and at least one gap between the portions for receiving extra bonding material of the bonding layer.
Claims16
A bonding structure for forming at least one electrical connection between an optoelectronic component and a photonic substrate, the bonding structure comprising:
- a pillar structure between the optoelectronic component and the photonic substrate, and
- a bonding layer comprising bonding material on the pillar structure,
- wherein the pillar structure for at least one individual electrical connection comprises at least two portions and at least one gap between the portions for receiving extra bonding material of the bonding layer,
- wherein the bonding layer comprises a eutectic alloy and has a thickness of 1 to 10 μm, and
- wherein the bonding structure allows an optical connection between the optoelectronic component and the photonic substrate.
A method for forming at least one electrical connection between an optoelectronic component and a photonic substrate comprising:
- making a pillar structure on a surface of the photonic substrate;
- making a first bonding material layer on the pillar structure;
- making a second bonding material layer on the optoelectronic component;
- and
- bonding the first bonding material layer with the second bonding material layer for forming a bonding layer;
- wherein the pillar structure for at least one individual electrical connection comprises at least two portions and at least one gap between the portions for receiving extra bonding material of the bonding layer,
- wherein bonding of the first bonding material layer with the second bonding material layer is provided by eutectic bonding, and
- wherein an optical connection between the optoelectronic component and the photonic substrate is present after the bonding step.
A bonding structure for forming at least one electrical connection between an optoelectronic component and a photonic substrate, the bonding structure comprising:
- a pillar structure between the optoelectronic component and the photonic substrate, and
- a bonding layer comprising bonding material on the pillar structure,
- wherein the pillar structure for at least one individual electrical connection comprises at least two portions and at least one gap between the portions for receiving extra bonding material of the bonding layer,
- wherein the bonding layer comprises a eutectic alloy and has a thickness of 1 to 10 μm, and
- wherein the pillar structure defines a closed path on the surface of the photonic substrate for enclosing a cavity inside the closed path and between the optoelectronic component and the photonic substrate.
Dependencies are inferred from the claim text.