Semiconductor laser device

A semiconductor laser device comprising:

• a submount including a main body having a bottom plate part, a projecting part projecting from a surface of the bottom plate part, and an other projecting part projecting from the surface of the bottom plate part, and a lid bonded to the projecting part and the other projecting part, and
• a semiconductor laser bonded to the submount,
• wherein
• the semiconductor laser includes:
• a semiconductor substrate;
• a semiconductor structure part that is formed on a surface of the semiconductor substrate and has an active layer for generating light emitted from an emission end face;
• a first electrode formed on a surface of the semiconductor structure part opposite to the semiconductor substrate;
• a second electrode formed on a rear surface of the semiconductor substrate;
• and
• a protective film formed on the surface of the semiconductor structure part and a surface of the first electrode,
• wherein
• a side face of the semiconductor laser facing the projecting part, and the second electrode are respectively bonded to a side face of the projecting part facing the semiconductor laser and a surface of the bottom plate part with a bonding member,
• a side face of the semiconductor laser facing the other projecting part is bonded to a side face of the other projecting part facing the semiconductor laser with the bonding member,
• a z-direction is defined to be a direction in which the projecting part and the other projecting part project from the surface of the bottom plate part,
• the bonding member is such that an end part thereof in the z-direction in a portion in which the side face of the projecting part and the side face of the semiconductor laser are bonded is located further away in the z-direction than the surface of the semiconductor substrate of the semiconductor laser, and another end part thereof in the z-direction in a portion in which the side face of the other projecting part and the side face of the semiconductor laser are bonded is located further away in the z-direction than the surface of the semiconductor substrate of the semiconductor laser, and
• the lid is such that a first lid side face thereof facing the side face of the projecting part, a second lid side face thereof facing the side face of the other projecting part, and a lid rear surface facing a surface of the protective film of the semiconductor laser are bonded to the side face of the projecting part, the side face of the other projecting part, and the surface of the protective film that are respectively facing one another, with another bonding member.

A semiconductor laser device comprising:

• a submount including a main body having a bottom plate part, a projecting part projecting from a surface of the bottom plate part, and an other projecting part projecting from the surface of the bottom plate part, and a lid bonded to the projecting part and the other projecting part;
• and
• a semiconductor laser bonded to the submount,
• wherein
• the semiconductor laser includes:
• a semiconductor substrate;
• a semiconductor structure part that is formed on a surface of the semiconductor substrate and has an active layer for generating light emitted from an emission end face;
• a first electrode formed on a surface of the semiconductor structure part opposite to the semiconductor substrate;
• a second electrode formed on a rear surface of the semiconductor substrate;
• and
• a protective film formed on the surface of the semiconductor structure part and a surface of the first electrode,
• wherein
• a side face of the semiconductor laser facing the projecting part, and the second electrode are respectively bonded to a side face of the projecting part facing the semiconductor laser and a surface of the bottom plate part with a bonding member,
• a side face of the semiconductor laser facing the other projecting part is bonded to a side face of the other projecting part facing the semiconductor laser with the bonding member,
• a z-direction is defined to be a direction in which the projecting part and the other projecting part project from the surface of the bottom plate part,
• the bonding member is such that an end part thereof in the z-direction in a portion in which the side face of the projecting part and the side face of the semiconductor laser are bonded is located further away in the z-direction than the surface of the semiconductor substrate of the semiconductor laser, and another end part thereof in the z-direction in a portion in which the side face of the other projecting part and the side face of the semiconductor laser are bonded is located further away in the z-direction than the surface of the semiconductor substrate of the semiconductor laser,
• the submount is such that an end part of the projecting part in the z-direction and the other end part of the other projecting part in the z-direction are located further away in the z-direction than the surface of the first electrode of the semiconductor laser, and
• the lid is such that a first lid side face thereof facing the side face of the projecting part, a second lid side face facing the side face of the other projecting part, and a lid rear surface facing a surface of the protective film of the semiconductor laser are bonded to the side face of the projecting part, the side face of the other projecting part, and the surface of the protective film that are respectively facing one another, with another bonding member.