Plasma processing device and plasma processing method
AssigneeTokyo Electron Limited
InventorsKatsutoshi Ishigami, Takeshi Ishida
Life of this patent
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Abstract
A plasma processing device includes: a plurality of processing chambers; a junction exhaust pipe into which a plurality of exhaust flow paths for evacuating interiors of the plurality of processing chambers joins; and a plurality of branch exhaust pipes disposed between the plurality of exhaust flow paths and the junction exhaust pipe and connecting the junction exhaust pipe to the plurality of exhaust flow paths, respectively, wherein each of the plurality of branch exhaust pipes includes a mechanism, which is disposed in a flow path of the branch exhaust pipe, to deactivate energy of hot electrons flowing through the flow path.
Claims8
A plasma processing device comprising:
- a plurality of processing chambers;
- a junction exhaust pipe into which a plurality of exhaust flow paths joins;
- and
- a plurality of branch exhaust pipes disposed between the plurality of exhaust flow paths and the junction exhaust pipe and connecting the junction exhaust pipe to the plurality of exhaust flow paths, respectively;
- and
- a grounded baffle plate,
- wherein the plurality of exhaust flow paths is configured to evacuate interiors of the plurality of processing chambers,
- wherein each of the plurality of branch exhaust pipes includes a mechanism, which is disposed in a flow path of the branch exhaust pipe, configured to deactivate energy of hot electrons flowing through the flow path,
- wherein the mechanism is configured to form the flow path of the branch exhaust pipe in a spiral shape, and
- wherein the grounded baffle plate faces an outlet of the flow path of the branch exhaust pipe having the spiral shape at an angle of 90 degrees or less with respect to an exhaust direction of the flow path so as to collide with hot electrons.
Dependencies are inferred from the claim text.