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US 12,573,522 B2Granted
Thin-film structure and semiconductor device comprising the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSangjun Lee, Gabjin Nam, Eunha Lee, Hyangsook Lee, Bongjin Kuh, Junghwa Kim
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Abstract
A thin-film structure and a semiconductor device including the same are provided. The thin-film structure includes: a base layer; and a dielectric layer on the base layer, the dielectric layer including crystals including a <11x> (0≤x≤1) crystal orientation in an out-of-plane direction of the base layer and having an orthorhombic crystal structure of an oIV phase (space group: Pmn21).
Claims20
A thin-film structure comprising:
- a base layer;
- and
- a dielectric layer on the base layer, the dielectric layer including crystals including a <11x> (0≤x≤1) crystal orientation in an out-of-plane direction of the base layer and having an orthorhombic crystal structure of an oIV phase (space group:
- Pmn21).
1 more element
Dependencies are inferred from the claim text.