Electrophotographic photosensitive member, process cartridge, and electrophotographic apparatus

A process cartridge, comprising:

• an electrophotographic photosensitive member comprising a support having a cylindrical shape, and a photosensitive layer;
• and
• at least one unit selected from the group consisting of a charging unit, a developing unit and a cleaning unit;
• the process cartridge integrally supporting the electrophotographic photosensitive member and the at least one unit, and being removably mounted onto a main body of an electrophotographic apparatus, wherein
• the support has a surface comprising Al and/or an Al alloy, and comprising Al crystal grains having
• (α) a plane at −15° or more and less than +15° with respect to a {001} orientation,
• (β) a plane at −15° or more and less than +15° with respect to a {101} orientation, and
• (γ) a plane at −15° or more and less than +15° with respect to a {111} orientation, and
• a ratio of an area occupied by the Al crystal grain having the (α) to a total area of the surface of the support is 10% or less, and a ratio of an area occupied by the Al crystal grain having the (γ) to the total area of the surface of the support is 50 to 84%.

An electrophotographic apparatus, comprising:

• an electrophotographic photosensitive member comprising a support having a cylindrical shape, and a photosensitive layer;
• a charging unit;
• an exposing unit;
• a developing unit;
• and
• a transferring unit, wherein
• the support has a surface comprising Al and/or an Al alloy, and comprising Al crystal grains having
• (α) a plane at −15° or more and less than +15° with respect to a {001} orientation,
• (β) a plane at −15° or more and less than +15° with respect to a {101} orientation, and
• (γ) a plane at −15° or more and less than +15° with respect to a {111} orientation, and
• a ratio of an area occupied by the Al crystal grain having the (α) to a total area of the surface of the support is 10% or less, and a ratio of an area occupied by the Al crystal grain having the (γ) to the total area of the surface of the support is 50 to 84%.