Guiding structures for fabrication of angled features in a semiconductor device

A semiconductor structure, comprising:

• a first plurality of slanted features within a first region of a substrate wherein the first plurality of slanted features includes a first orientation angle that includes a first vertical angle different from 90 degrees;
• a second plurality of slanted features within a second region of the substrate, the second region of the substrate being adjacent to the first region of the substrate, wherein the second plurality of slanted features includes a second orientation angle different from the first orientation angle and that includes a second vertical angle equal to 90 degrees, the first plurality of slanted features and the second plurality of slanted features providing a mold for nanoimprint lithography;
• and
• two or more magnetic guiding structures embedded within the first region of the substrate, and the first plurality of slanted features being located between the two or more magnetic guiding structures for varying a magnetic field strength around the first plurality of slanted features.