Electro-optical circuit
AssigneeCisco Technology, Inc.
InventorsVipulkumar K. Patel, Sandeep Razdan
Life of this patent
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Abstract
The present disclosure relates to an opto-electrical circuit and a method of forming an opto-electrical circuit. According to an embodiment, a circuit includes a photonic integrated circuit, an intermetal dielectric, an oxide layer, and a first electronic integrated circuit. The intermetal dielectric is coupled to the photonic integrated circuit. The oxide layer is coupled to the intermetal dielectric such that the intermetal dielectric is positioned between the photonic integrated circuit and the oxide layer. The first electronic integrated circuit is positioned within the oxide layer and coupled to the intermetal dielectric. A through oxide via extends through the oxide layer to the intermetal dielectric.
Claims20
A circuit comprising:
- a photonic integrated circuit;
- an intermetal dielectric coupled to the photonic integrated circuit;
- an oxide layer coupled to the intermetal dielectric such that the intermetal dielectric is positioned between the photonic integrated circuit and the oxide layer;
- and
- a first electronic integrated circuit positioned within the oxide layer and directly coupled to the intermetal dielectric, wherein a through oxide via extends through the oxide layer to the intermetal dielectric.
A method of forming a circuit, the method comprising:
- attaching a first electronic integrated circuit directly to an intermetal dielectric;
- forming an oxide layer on the intermetal dielectric such that the first electronic integrated circuit is positioned in the oxide layer and such that the intermetal dielectric is positioned between a photonic integrated circuit and the oxide layer;
- and
- forming a through oxide via through the oxide layer to the intermetal dielectric.
A system comprising:
- a substrate;
- a circuit coupled to the substrate, the circuit comprising:
- a photonic integrated circuit;
- an intermetal dielectric coupled to the photonic integrated circuit;
- an oxide layer directly coupled to the intermetal dielectric such that the intermetal dielectric is positioned between the photonic integrated circuit and the oxide layer and such that the oxide layer is positioned between the substrate and the intermetal dielectric;
- and
- an electronic integrated circuit positioned within the oxide layer and coupled to the intermetal dielectric, wherein a through oxide via extends through the oxide layer to the intermetal dielectric;
- and
- a heatsink coupled to the substrate, wherein the heatsink extends over the circuit such that the circuit is positioned between the substrate and the heatsink.
Dependencies are inferred from the claim text.