Integrated oxide device

A silicon-on-insulator wafer comprising:

• a silicon substrate;
• an insulating layer of silicon dioxide formed on the silicon substrate;
• a device silicon layer formed on the insulating layer of silicon dioxide, the device silicon layer having a thickness less than 200 Å;
• and
• a layer of a transition metal oxide (TMO) including at least one of strontium titanate and barium titanate, wherein the layer of TMO is formed directly on the insulating layer of silicon dioxide in the absence of wafer bonding.

A wafer comprising:

• a silicon substrate;
• a device silicon layer;
• a silicon dioxide layer formed on the device silicon layer, wherein the device silicon layer has a thickness of from 45 Å to less than 200 Å;
• and
• a crystalline functional transition metal oxide (TMO) layer created directly on the SiO2 layer in the absence of wafer bonding.