Chemical vapor deposition growth of hexagonal boron nitride films and nanostructures

A method of synthesizing hexagonal boron nitride, the method comprising:

• positioning a solid boron-containing precursor and a growth substrate within a chemical vapor deposition chamber, wherein the solid boron-containing precursor includes boron powders, boron fragments, or boron platelets and does not directly contact the growth substrate, and wherein the growth substrate includes nickel, iron, copper, chromium, or alloys thereof;
• heating an interior of the chemical vapor deposition chamber to between 800° C. and 1200° C., inclusive;
• and
• flowing a nitrogen-containing reaction gas mixture into the chemical vapor deposition chamber, the reaction gas mixture including a nitrogen compound and hydrogen gas;
• wherein the reaction gas mixture is pressurized between 10 mTorr and 800 Torr, inclusive, wherein the growth substrate reacts with boron released from the solid boron-containing precursor and the nitrogen compound to form a single-layer or multi-layer hexagonal boron nitride film, and wherein the growth substrate comprises a film having a thickness of between 0.1 μm and 5.0 μm, inclusive.

A method of synthesizing hexagonal boron nitride, the method comprising:

• positioning a solid boron-containing precursor and a growth substrate within a chemical vapor deposition chamber, wherein the solid boron-containing precursor includes boron powders, boron fragments, or boron platelets and does not directly contact the growth substrate, and wherein the growth substrate includes nickel, iron, copper, chromium, or alloys thereof;
• heating an interior of the chemical vapor deposition chamber to between 800° C. and 1200° C., inclusive;
• and
• flowing a nitrogen-containing reaction gas mixture into the chemical vapor deposition chamber, the reaction gas mixture including a nitrogen compound and hydrogen gas;
• wherein the reaction gas mixture is pressurized between 10 mTorr and 800 Torr, inclusive, wherein the growth substrate reacts with boron released from the solid boron-containing precursor and the nitrogen compound to form a single-layer or multi-layer hexagonal boron nitride film, and wherein the growth substrate comprises a foil having a thickness of between 5.0 μm and 150 μm, inclusive.

A method of synthesizing hexagonal boron nitride, the method comprising:

• positioning a solid boron-containing precursor and a growth substrate within a chemical vapor deposition chamber, wherein the solid boron-containing precursor includes boron powders, boron fragments, or boron platelets and does not directly contact the growth substrate, and wherein the growth substrate includes nickel, iron, copper, chromium, or alloys thereof;
• heating an interior of the chemical vapor deposition chamber to between 800° C. and 1200° C., inclusive;
• and
• flowing a nitrogen-containing reaction gas mixture into the chemical vapor deposition chamber, the reaction gas mixture including a nitrogen compound and hydrogen gas;
• wherein the reaction gas mixture is pressurized between 10 mTorr and 800 Torr, inclusive, wherein the growth substrate reacts with boron released from the solid boron-containing precursor and the nitrogen compound to form a single-layer or multi-layer hexagonal boron nitride film, and wherein the growth substrate comprises a sheet having a thickness of between 0.15 mm and 5 mm, inclusive.

A method of synthesizing hexagonal boron nitride, the method comprising:

• positioning a solid boron-containing precursor and a growth substrate within a chemical vapor deposition chamber, wherein the solid boron-containing precursor includes boron powders, boron fragments, or boron platelets and does not directly contact the growth substrate, and wherein the growth substrate includes nickel, iron, copper, chromium, or alloys thereof;
• heating an interior of the chemical vapor deposition chamber to between 800° C. and 1200° C., inclusive;
• and
• flowing a nitrogen-containing reaction gas mixture into the chemical vapor deposition chamber, the reaction gas mixture including a nitrogen compound and hydrogen gas;
• wherein the reaction gas mixture is pressurized between 10 mTorr and 800 Torr, inclusive, wherein the growth substrate reacts with boron released from the solid boron-containing precursor and the nitrogen compound to form a single-layer or multi-layer hexagonal boron nitride film, and wherein the growth substrate comprises a plate having a thickness of between 5 mm and 100 mm, inclusive.

A method of synthesizing hexagonal boron nitride, the method comprising:

• positioning a solid boron-containing precursor and a growth substrate within a chemical vapor deposition chamber, wherein the solid boron-containing precursor includes boron powders, boron fragments, or boron platelets and does not directly contact the growth substrate, and wherein the growth substrate includes nickel, iron, copper, chromium, or alloys thereof;
• heating an interior of the chemical vapor deposition chamber to between 800° C. and 1200° C., inclusive;
• and
• flowing a nitrogen-containing reaction gas mixture into the chemical vapor deposition chamber, the reaction gas mixture including a nitrogen compound and hydrogen gas;
• wherein the reaction gas mixture is pressurized between 10 mTorr and 800 Torr, inclusive, wherein the growth substrate reacts with boron released from the solid boron-containing precursor and the nitrogen compound to form a single-layer or multi-layer hexagonal boron nitride film, and wherein the growth substrate comprises includes a three-dimensional geometry including at least one of nails, tubes, and ball bearings.

A method of synthesizing boron nitride nanotubes, the method comprising:

• positioning a solid boron-containing precursor and metallic nanoparticles within a chemical vapor deposition chamber, wherein the solid boron-containing precursor includes boron powders, boron fragments, or boron platelets and does not directly contact the metallic nanotubes, and wherein the metallic nanoparticles include nickel, iron, copper, chromium, or alloys thereof;
• heating an interior of the chemical vapor deposition chamber to between 800° C. and 1200° C., inclusive;
• and
• flowing a nitrogen-containing reaction gas mixture into the chemical vapor deposition chamber, the reaction gas mixture including a nitrogen compound and hydrogen gas;
• wherein the reaction gas mixture is pressurized between 10 mTorr and 800 Torr, inclusive, and wherein the metallic nanotubes react with boron released from the solid boron-containing precursor and the nitrogen compound to form boron nitride nanotubes.