Semiconductor process device and process chamber thereof

A process chamber of a semiconductor process device, comprising:

• a furnace tube;
• a front flange;
• a rear flange;
• a support mechanism;
• a first electrode mechanism;
• and
• a second electrode mechanism;
• wherein:
• the front flange and the rear flange are respectively arranged at a furnace mouth and a furnace tail of the furnace tube;
• the support mechanism is arranged in the furnace tube and includes two support rods, a first end of each support rod is connected to the front flange, a second end of each support rod is connected to the rear flange, and the two support rods are used to carry a first wafer boat and a second wafer boat;
• the first electrode mechanism includes two first electrode mechanisms which are respectively sleeved on the first ends of the two support rods, the two first electrode mechanisms have opposite polarities and are used to carry a front end of the first wafer boat when the first wafer boat is loaded on the support rods and are respectively electrically connected to two terminals at the front end of the first wafer boat to introduce electrodes into the first wafer boat;
• the second electrode mechanism includes two second electrode mechanisms which are both arranged at the furnace tail of the furnace tube, and are used to introduce electrodes into the second wafer boat when the second wafer boat is loaded on the support rods.

A semiconductor process device, comprising a process chamber, wherein the process chamber includes:

• a furnace tube;
• a front flange;
• a rear flange;
• a support mechanism;
• a first electrode mechanism;
• and
• a second electrode mechanism;
• wherein:
• the front flange and the rear flange are respectively arranged at a furnace mouth and a furnace tail of the furnace tube;
• the support mechanism is arranged in the furnace tube and includes two support rods, a first end of each support rod is connected to the front flange, a second end of each support rod is connected to the rear flange, and the two support rods are used to carry a first wafer boat and a second wafer boat;
• the first electrode mechanism includes two first electrode mechanisms which are respectively sleeved on the first ends of the two support rods, the two first electrode mechanisms have opposite polarities and are used to carry a front end of the first wafer boat when the first wafer boat is loaded on the support rods and are respectively electrically connected to two terminals at the front end of the first wafer boat to introduce electrodes into the first wafer boat;
• the second electrode mechanism includes two second electrode mechanisms which are both arranged at the furnace tail of the furnace tube, and are used to introduce electrodes into the second wafer boat when the second wafer boat is loaded on the support rods;
• each first electrode mechanism includes an electrode support assembly and an electrode introduction assembly, the electrode support assembly is sleeved on the first end of the corresponding support rod, when the first wafer boat is loaded on the support rods, the electrode support assembly carries the front end of the first wafer boat and is electrically connected to the corresponding terminal at the front end of the first wafer boat;
• and
• the electrode introduction assembly is inserted into the front flange, one end of the electrode introduction assembly is electrically connected to the electrode support assembly, and the other end of the electrode introduction assembly is electrically connected to an RF power supply.