Method of processing substrate, substrate processing apparatus, and recording medium
AssigneesKokusai Electric Corporation, Air Water Inc.
InventorsKimihiko Nakatani, Yoshitomo Hashimoto, Yoshiro Hirose, Fumio Kawasaki, Yasunori Otsuka, Keisuke Nagata
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Abstract
There is provided a technique that includes: providing a substrate including a conductive film and an insulating film on a surface of the substrate; and forming an oxide film on a surface of the insulating film, among the conductive film and the insulating film, by supplying a halogen-free precursor, an oxidizing agent, and a catalyst to the substrate under a non-plasma atmosphere.
Claims20
A method of processing a substrate, comprising:
- providing the substrate including a conductive film and an insulating film on a surface of the substrate;
- forming a film formation inhibition layer on a surface of the conductive film, among the conductive film and the insulating film, by supplying a modifying agent to the substrate;
- and
- after the act of forming the film formation inhibition layer, forming an oxide film on a surface of the insulating film, among the conductive film and the insulating film, by supplying a halogen-free precursor, an oxidizing agent, and a catalyst to the substrate under a non-plasma atmosphere,
- wherein a temperature of the substrate in the act of forming the oxide film is less than a temperature of the substrate in the act of forming the film formation inhibition layer.
A substrate processing apparatus comprising:
- a process chamber where a substrate is processed;
- a providing device configured to provide the substrate into the process chamber;
- a modifying agent supply system configured to supply a modifying agent to the substrate in the process chamber;
- a precursor supply system configured to supply a halogen-free precursor to the substrate in the process chamber;
- an oxidizing agent supply system configured to supply an oxidizing agent to the substrate in the process chamber;
- a catalyst supply system configured to supply a catalyst to the substrate in the process chamber;
- and
- a controller configured to be capable of controlling the providing device, the modifying agent supply system, the precursor supply system, the oxidizing agent supply system, and the catalyst supply system to perform a process including:
- providing the substrate, including a conductive film and an insulating film on a surface of the substrate, into the process chamber;
- forming a film formation inhibition layer on a surface of the conductive film, among the conductive film and the insulating film, by supplying the modifying agent to the substrate;
- and
- after the act of forming the film formation inhibition layer, forming an oxide film on a surface of the insulating film, among the conductive film and the insulating film, by supplying the halogen-free precursor, the oxidizing agent, and the catalyst to the substrate under a non-plasma atmosphere,
- wherein a temperature of the substrate in the act of forming the oxide film is less than a temperature of the substrate in the act of forming the film formation inhibition laver.
A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a process comprising:
- providing a substrate, including a conductive film and an insulating film on a surface of the substrate, into a process chamber;
- forming a film formation inhibition layer on a surface of the conductive film, among the conductive film and the insulating film, by supplying a modifying agent to the substrate;
- and
- after the act of forming the film formation inhibition layer, forming an oxide film over a surface of the insulating film, among the conductive film and the insulating film, by supplying a halogen-free precursor, an oxidizing agent, and a catalyst to the substrate under a non-plasma atmosphere,
- wherein a temperature of the substrate in the act of forming the oxide film is less than a temperature of the substrate in the act of forming the film formation inhibition layer.
Dependencies are inferred from the claim text.