Selective deposition of silicon oxide on metal surfaces
AssigneeASM IP Holding B.V.
InventorsAndrea Illiberi, Giuseppe Alessio Verni, Shaoren Deng, Daniele Chiappe, Eva Tois, Marko Tuominen, Michael Givens
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Abstract
Methods for selective deposition of silicon oxide films on metal or metallic surfaces relative to dielectric surfaces are provided. A dielectric surface of a substrate may be selectively passivated relative to a metal or metallic surface, such as by exposing the substrate to a silylating agent. Silicon oxide is then selectively deposited on the metal or metallic surface relative to the passivated oxide surface by contacting the metal surface with a metal catalyst and a silicon precursor comprising a silanol.
Claims19
A method of selectively depositing silicon oxide on a metal surface of a substrate relative to a dielectric surface of the substrate, the method comprising, in order:
- contacting the substrate with a passivation agent to selectively passivate the dielectric surface relative to the metal surface of the substrate;
- contacting the substrate having the dielectric surface thereof selectively passivated with a metal catalyst to selectively deposit the metal catalyst on the metal surface of the substrate relative to the dielectric surface of the substrate to thereby form a catalyzed metal surface, wherein the metal catalyst comprises dimethylaluminum isopropoxide (DMAI);
- and
- contacting the substrate having the catalyzed metal surface with a silicon reactant to selectively deposit silicon oxide on the catalyzed metal surface relative to the dielectric surface.
A method of selectively depositing silicon oxide on a metal surface of a substrate relative to a dielectric surface of the substrate comprising a deposition super-cycle comprising:
- contacting the substrate with a silylating agent to selectively passivate the dielectric surface relative to the metal surface of the substrate, and
- conducting one or more silicon oxide deposition sub-cycles comprising alternately and sequentially:
- (i) contacting the substrate with a metal catalyst to selectively deposit the metal catalyst on the metal surface of the substrate relative to the dielectric surface of the substrate to thereby form a catalyzed metal surface, wherein the metal catalyst comprises dimethylaluminum isopropoxide (DMAI), and (ii) contacting the catalyzed metal surface with a silicon reactant to selectively deposit silicon oxide on the catalyzed metal surface relative to the dielectric surface.
Dependencies are inferred from the claim text.