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US 12,571,092 B2Granted
Integrated methods for graphene formation
AssigneeApplied Materials, Inc.
InventorsBencherki Mebarki, Thai Cheng Chua, Christian W. Valencia, Joung Joo Lee, Xianmin Tang, Xiao Chen
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Abstract
A method of forming graphene layers is disclosed. The method includes precleaning the substrate with a plasma formed from an argon- and hydrogen-containing gas, followed by forming a graphene layer by exposing the substrate to a microwave plasma to form a graphene layer on the substrate. The microwave plasma comprises hydrocarbon and hydrogen radicals. The substrate is then cooled. A capping layer may also be formed.
Claims17
A method of forming a graphene layer, the method comprising:
- exposing a substrate comprising one or more of a conductive material and a dielectric material to a first plasma to clean the conductive material and remove oxide contaminants, the first plasma formed from an argon-hydrogen gas;
- exposing the substrate to a second plasma to form the graphene layer on the substrate, wherein the second plasma is a microwave plasma comprising argon, hydrocarbon, and hydrogen radicals, and wherein there is no vacuum break between exposure to the first plasma and exposure to the second plasma;
- and
- cooling the substrate to a temperature less than or equal to 100° C. at a controlled rate in a cooling chamber, wherein there is no vacuum break between exposure to the second plasma and cooling the substrate.
1 more element
Dependencies are inferred from the claim text.