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US 12,570,816 B2Granted
Hydrogen peroxide plasma surface modification
AssigneeRASIRC, Inc.
InventorsJeffrey J. Spiegelman, Gaku Tsuchibuchi, Hayato Murata, Hiroshi Taka
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Abstract
The techniques described herein relate to hydrogen peroxide plasma surface modification. In some embodiments, a method includes providing a mixture including hydrogen peroxide vapor from a source, wherein a concentration of the hydrogen peroxide vapor in the mixture is substantially stable over time. The method further includes forming a hydrogen peroxide plasma from the mixture and exposing a material to the hydrogen peroxide plasma in a chamber.
Claims18
A method comprising:
- providing a mixture comprising hydrogen peroxide vapor from a source, wherein a concentration of the hydrogen peroxide vapor in the mixture is substantially stable over time;
- forming a hydrogen peroxide plasma from the mixture;
- and
- exposing a material to the hydrogen peroxide plasma in a chamber,
- wherein the material is a semiconductor substrate comprising silicon.
2 more elements
Dependencies are inferred from the claim text.