Method and system for manufacturing silicon nitride from waste silicon kerf

A method for manufacturing silicon nitride from waste silicon kerf, comprising the steps of:

• reducing agglomerations in the waste silicon kerf;
• adding and mixing calcium oxide to the waste silicon kerf;
• placing the waste silicon kerf in a ceramic crucible;
• placing the ceramic crucible in a furnace;
• heat treating the waste silicon kerf in the ceramic crucible in the furnace under a vacuum to disassociate silicon dioxide into silicon and silicon monoxide;
• and
• heat treating the waste silicon kerf in the ceramic crucible in the furnace while introducing nitrogen gas into the furnace to create the silicon nitride,
• wherein the waste silicon kerf contains 5-25% water, 10-25% silicon dioxide, and 1-4% carbon.

A method for manufacturing silicon nitride from waste silicon kerf, comprising the steps of:

• placing the waste silicon kerf in a ceramic crucible;
• placing the ceramic crucible in a furnace;
• heating the furnace to a first temperature;
• maintaining the first temperature for a first dwelling time period;
• pulling a vacuum in the furnace to less than 100 microns;
• heating the furnace to a second temperature greater than the first temperature, the temperature increasing over a first ramping time period;
• maintaining the second temperature for a second dwelling time period;
• introducing nitrogen gas to the furnace;
• maintaining the second temperature for a third dwelling time period;
• and
• heat treating the waste silicon kerf to create the silicon nitride.

A method for manufacturing silicon nitride from waste silicon kerf, comprising the steps of:

• placing the waste silicon kerf in a ceramic crucible;
• placing the ceramic crucible in a furnace;
• heating and maintaining the furnace to 325° C. for 1-2 hours;
• pulling a vacuum in the furnace to less than 100 microns;
• heating the furnace to 1325° C. at a rate of approximately 4° C./min;
• maintaining the furnace at 1325° C. for at least one hour;
• introducing nitrogen gas to bring the furnace to a pressure of approximately 2 psig;
• maintaining the furnace at 1325° C. for at least one hour;
• and
• heat treating the waste silicon kerf to create the silicon nitride.