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US 12,569,880 B2Granted
CMOS ultrasonic transducers and related apparatus and methods
AssigneeBfly Operations, Inc.
InventorsJonathan M. Rothberg, Keith G. Fife, Tyler S. Ralston, Gregory L. Charvat, Nevada J. Sanchez
Life of this patent
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Abstract
CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.
Claims17
A method for forming a complementary metal oxide semiconductor ultrasonic transducer, the method comprising:
- removing a portion of a first layer disposed over a first wafer including an electrode structure and a conductive pillar, wherein the removal of the portion of the first layer exposes a surface of the conductive pillar;
- depositing a second layer over the first layer and the exposed surface of the conductive pillar;
- forming a cavity in the second layer over the electrode structure, the cavity having a sidewall formed from the second layer;
- and
- bonding a second wafer to the second layer to form a membrane over the cavity, wherein the second wafer and the second layer are doped with the same dopant.
2 more elements
A complementary metal oxide semiconductor (CMOS) ultrasonic transducer, comprising:
- a first wafer including an electrode structure and a conductive pillar;
- a first layer disposed over the first wafer such that a surface of the conductive pillar is exposed through the first layer;
- a second layer disposed over the first layer and an exposed surface of the conductive pillar, the second layer having a cavity disposed over the electrode structure, the cavity having a sidewall formed from the second layer;
- and
- a second wafer bonded to the second layer forming a membrane over the cavity, wherein the second wafer and the second layer are doped with the same dopant.
2 more elements
Dependencies are inferred from the claim text.