Film formation method

Abstract

A film formation method having an excellent mass productivity, whereby a time required for forming a film having a desired thickness is short. In the film formation method, the following steps are performed: atomizing or dropletizing a liquid containing a metal complex, the liquid being raw material solution, conveying resulting mist or droplets to a base by a carrier gas, and forming a metal oxide file on the base by thermally reacting the mist or droplets in the vicinity of the base, the metal oxide film comprising a crystalline oxide semiconductor. A metal complex is used, which shows an exothermic peak at 480° C. to 520° C. in a thermogravimetric-differential thermal analysis at a temperature increase rate of 20° C./min under an oxygen-containing atmosphere.

Dependencies are inferred from the claim text.