Device for treating semiconductor process exhaust gas
AssigneePlasma Science System Co., Ltd.
InventorJong Pil Yoon
Life of this patent
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Abstract
Provided is an exhaust gas treatment apparatus that treats exhaust gas generated from semiconductor process and directed to a vacuum pump. Exhaust gas treatment apparatus includes a plasma generating unit for generating plasma, a reaction chamber in which perfluoride is decomposed by the plasma to generate a decomposition gas, and gas supplying unit for supplying the decomposition gas from the reaction chamber to a processing chamber in which the exhaust gas from the semiconductor process is introduced and treated exhaust gas is discharged to the vacuum pump. Decomposition gas reacts with the exhaust gas in the processing chamber to suppress generation of salt in solid state by a component of the exhaust gas.
Claims8
An exhaust gas treatment apparatus for processing an exhaust gas generated from a semiconductor process and directed to a vacuum pump, the apparatus comprising:
- a plasma generating unit for generating plasma;
- a reaction chamber in which perfluoride is decomposed by the plasma to generate decomposition gas;
- and
- a gas supplying unit for supplying the decomposition gas from the reaction chamber to a processing chamber in which the exhaust gas from the semiconductor process is introduced and treated exhaust gas is discharged to the vacuum pump,
- wherein the decomposition gas reacts with the exhaust gas in the processing chamber to suppress generation of salt in solid state by a component of the exhaust gas.
Dependencies are inferred from the claim text.