Via formed using a partial plug that stops before a substrate
AssigneeCelestial AI Inc.
InventorsAnkur Aggarwal, Jeremy Matthew Plunkett
Life of this patent
Estimating the term…
Abstract
A method is described. The method includes creating a partial through-substrate via (TSV) plug in a front side of a wafer, the partial TSV having a front side and a back side. The back side of the partial TSV extending toward a front side of a substrate but not into a bulk of the substrate. A cavity is etched in a back side of the wafer that exposes the partial TSV plug. An insulator is applied to the etched back side of the wafer. A portion of the partial TSV plug is exposed by removing a portion of the insulator. A conductive material is deposited to connect the exposed, partial TSV plug to a surface on the back side of the wafer.
Claims17
A method comprising:
- creating a partial through-substrate via (TSV) plug in a front side of a wafer, the wafer comprising an insulating layer and a substrate, the partial TSV plug having a front side and a back side, the back side of the partial TSV plug extending toward a front side of the substrate;
- etching a cavity in a back side of the wafer that exposes a portion of the back side of the insulating layer near the back side of the partial TSV plug;
- applying an insulator to the etched back side of the wafer, wherein the insulator covers the portion of the back side of the insulating layer near the back side of the partial TSV plug, and wherein a thickness of the insulator at a back side of the substrate is greater than a thickness of the insulator covering the portion of the back side of the insulating layer;
- exposing a portion of the back side of the partial TSV plug by removing a portion of the insulator;
- and
- depositing a conductive material to connect the exposed portion of the back side of the partial TSV plug to a surface on the back side of the wafer.
A method comprising:
- creating a partial through-substrate via (TSV) plug in a front side of a wafer, the wafer comprising an insulating layer and a substrate, the partial TSV plug having a front side and a back side, the back side of the partial TSV plug extending toward a front side of the substrate through a portion of the insulating layer without passing into the substrate;
- etching a cavity in a back side of the wafer that exposes a portion of the back side of the insulating layer near the back side of the partial TSV plug;
- applying an insulator to the etched back side of the wafer, wherein the insulator covers the portion of the back side of the insulating layer;
- back portion of the partial TSV plug;
- exposing a portion of the back side of the partial TSV plug by removing a portion of the insulator;
- and
- depositing a conductive material to connect the exposed portion of the back side of the partial TSV plug to a surface on the back side of the wafer.
Dependencies are inferred from the claim text.