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US 12,568,805 B2Granted
Silicon wafer and method for filling silicon via thereof
AssigneeTencent Technology (Shenzhen) Company Limited
InventorsDengfeng Li, Wenlong Zhang
Life of this patent
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Abstract
Disclosed are a silicon wafer and a method for filling a silicon via thereof, and belong to the field of superconducting quantum technologies. The method includes: obtaining a silicon wafer including at least one silicon via; providing a superconducting material on at least one side of the silicon wafer, the at least one side comprising a side where an opening of the silicon via is located; and heating and pressurizing the superconducting material to fill the superconducting material into the silicon via.
Claims19
A method for filling a silicon via, comprising:
- obtaining a silicon wafer including at least one silicon via;
- providing a superconducting material on at least one side of the silicon wafer, the at least one side comprising a side where an opening of the silicon via is located, the superconducting material being in a granular form with diameters of particles of the superconducting material being greater than a via diameter of the silicon via;
- and
- heating and pressurizing the superconducting material to fill the superconducting material into the silicon via.
1 more element
Dependencies are inferred from the claim text.