Semiconductor device and method of manufacturing
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYan-Yu Chen, Wei Tse Hsu
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Abstract
A method of manufacturing a semiconductor device includes reducing a thickness of a device wafer bonded to a carrier wafer, wherein the device wafer includes a device, a portion of the carrier wafer beyond the device, in a plan view, is called a non-bonding area, and a portion of the carrier wafer overlapping the device, in the plan view, is called a device area. The method further includes performing an etching process on the non-bonding area of the carrier wafer, wherein the etching process is performed completely outside the device area of the carrier wafer.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- reducing a thickness of a device wafer bonded to a carrier wafer, wherein the device wafer comprises a device, a portion of the carrier wafer beyond the device, in a plan view, is called a non-bonding area, and a portion of the carrier wafer overlapping the device, in the plan view, is called a device area;
- performing an etching process on the non-bonding area of the carrier wafer, wherein the etching process is performed completely outside the device area of the carrier wafer.
A method of manufacturing a semiconductor device, the method comprising:
- bonding a device wafer to a carrier wafer using a bonding oxide, wherein the device wafer comprises a device, and a non-bonding area of the device wafer surrounds the device;
- performing a trimming process on the device wafer to reduce a thickness of the device wafer in the non-bonding area of the device wafer;
- reducing a thickness of the device wafer, after the trimming process, to expose the device;
- and
- performing a corona etching process on a non-bonding area of the carrier wafer.
A method of manufacturing a semiconductor device, the method comprising:
- bonding a device wafer to a carrier wafer using a bonding oxide, wherein the device wafer comprises a device and has a first beveled edge;
- forming a sealant between the first beveled edge and the carrier wafer;
- removing a portion of the first beveled edge, wherein removing the portion of the beveled edge comprises removing a portion of the carrier wafer;
- thinning the device wafer adjacent to the portion of the first beveled edge;
- and
- removing a portion of the device wafer to expose the device.
Dependencies are inferred from the claim text.