Semiconductor unit, semiconductor module, and electronic apparatus

A semiconductor module, comprising:

• a semiconductor unit that includes:
• a barrier layer that includes a first compound semiconductor;
• a channel layer that includes a second compound semiconductor, wherein the channel layer is in contact with the barrier layer at a first face;
• an insulation layer on a second face of the barrier layer, wherein
• the second face of the barrier layer is on an opposite side of the first face, and
• the insulation layer has an opening section that exposes the barrier layer;
• a gate electrode in the opening section;
• a source electrode and a drain electrode on the second face of the barrier layer, wherein the gate electrode is between the source electrode and the drain electrode on the second face of the barrier layer;
• and
• a material layer that includes:
• a metal material or a semiconductor material, and
• an electrically conductive material same as an electrically conductive material included in one of the source electrode or the drain electrode, wherein
• the material layer is in contact with the second face of the barrier layer between the gate electrode and the drain electrode.

An electronic apparatus, comprising:

• a semiconductor unit that includes:
• a barrier layer that includes a first compound semiconductor;
• a channel layer that includes a second compound semiconductor, wherein the channel layer is in contact with to the barrier layer at a first face;
• an insulation layer provided on a second face of the barrier layer, wherein
• the second face of the barrier layer is on an opposite side of the first face, and
• the insulation layer has an opening section that exposes the barrier layer;
• a gate electrode in the opening section;
• a source electrode and a drain electrode on the second face of the barrier layer, wherein the gate electrode is between the source electrode and the drain electrode on the second face of the barrier layer;
• and
• a material layer that includes:
• a metal material or a semiconductor material, and
• an electrically conductive material same as an electrically conductive material included in one of the source electrode or the drain electrode, wherein
• the material layer is in contact with the second face of the barrier layer between the gate electrode and the drain electrode.