Technologies for majority gates

A die comprising a majority gate, the majority gate comprising:

• a magnetoelectric layer;
• three or more inputs, wherein individual inputs of the three or more inputs, when a voltage is applied, induces a magnetization in the magnetoelectric layer based on the applied voltage, wherein individual inputs of the three or more inputs are electrically isolated from other inputs of the three or more inputs;
• a ferromagnetic layer coupled to the magnetoelectric layer, wherein the magnetization in the magnetoelectric layer controls a magnetic field in the ferromagnetic layer;
• a spin-orbit coupling stack layer coupled to the ferromagnetic layer;
• electrodes coupled to the ferromagnetic layer and the spin-orbit coupling stack layer to pass current through the ferromagnetic layer and the spin-orbit coupling stack layer;
• and
• an output coupled to the spin-orbit coupling stack layer,
• wherein the current, when passed through the ferromagnetic layer, becomes spin polarized,
• wherein the spin polarized current, when passed through the spin-orbit coupling stack, induces a voltage on the output.

A die comprising:

• three or more inputs, wherein individual inputs of the three or more inputs are electrically isolated from other inputs of the three or more inputs;
• an output;
• and
• means for creating a voltage on the output based on a majority of input voltages on the three or more inputs,
• wherein the means for creating the voltage on the output comprises a ferroelectric layer,
• wherein individual inputs of the three or more inputs, when a voltage is applied, induces a polarization in the ferroelectric layer based on the applied voltage,
• wherein a voltage on the output depends on a polarization of the ferroelectric layer,
• wherein the means for creating the voltage on the output comprises:
• a ferromagnetic layer adjacent the ferroelectric layer, wherein the ferroelectric layer is magnetoelectric, wherein individual inputs of the three or more inputs, when a voltage is applied, induces a magnetization in the ferroelectric layer based on the applied voltage;
• a spin-orbit coupling stack layer coupled to the ferromagnetic layer;
• and
• electrodes coupled to the ferromagnetic layer and the spin-orbit coupling stack layer to pass current through the ferromagnetic layer and the spin-orbit coupling stack layer,
• wherein the output is adjacent to the spin-orbit coupling stack layer,
• wherein the current, when passed through the ferromagnetic layer, becomes spins polarized,
• wherein the spin polarized current, when passed through the spin-orbit coupling stack, induces a voltage on the output.