Semiconductor device having a temperature sensor, a transistor, and a diode

A semiconductor device comprising:

• a temperature sensing section;
• a gate metal layer provided adjacent to the temperature sensing section in a top view;
• a transistor section spaced apart from the temperature sensing section by the gate metal layer;
• and
• a diode section spaced apart from the temperature sensing section by the gate metal layer;
• wherein
• the gate metal layer is disposed above an upper surface of a semiconductor substrate,
• wherein
• the transistor section includes a neighboring transistor section adjacent to the temperature sensing section in an active region, wherein a main current flows through the active region from the upper surface of a semiconductor substrate to a lower surface of the semiconductor substrate or from the lower surface of the semiconductor substrate to the upper surface of the semiconductor substrate,
• wherein the diode section includes a neighboring diode section adjacent to the temperature sensing section in the active region,
• wherein the transistor section includes a gate trench portion,
• wherein the neighboring transistor section adjacent to the temperature sensing section and the neighboring diode section adjacent to the temperature sensing section are arranged adjacent to each other in the top view, such that one side of the neighboring transistor section and one side of the neighboring diode section face each other in a longitudinal direction of the gate trench portion, and
• wherein the gate metal layer extends between the neighboring transistor section adjacent to the temperature sensing section and the neighboring diode section adjacent to the temperature sensing section.