Three terminal memory cells and method of making the same

Abstract

The disclosed subject matter relates generally to memory devices and a method of forming the same. More particularly, the present disclosure relates to three terminal resistive random-access (ReRAM) memory structures having two bottom electrodes and one top electrode. The present disclosure provides a structure including a first bottom electrode having an upper surface, a second bottom electrode having an upper surface, a switching layer on the upper surface of the first electrode and the upper surface of the second electrode, an oxygen enhancement layer on the switching layer, and a top electrode on the oxygen enhancement layer, the top electrode is positioned above the first bottom electrode and the second bottom electrode.

Dependencies are inferred from the claim text.