Method and apparatus for manufacturing a photomask from a blank mask

A photomask, comprising:

• a transparent substrate, wherein the transparent substrate comprises a light shielding area;
• and
• a multilayer light shielding pattern film disposed on the light shielding area,
• wherein the multilayer light shielding pattern film comprises a transition metal and at least any one between oxygen and nitrogen,
• wherein the multilayer light shielding pattern film comprises a first light shielding film and a second light shielding film, disposed on the first light shielding film and having a different composition than the first light shielding film,
• wherein the first light shielding film comprises a lower light shielding layer and an adhesion enhancing layer on the lower light shielding layer, the adhesion enhancing layer including the transition metal in an amount of 30-60 at %, carbon in an amount of 7-20 at %, nitrogen in an amount of 7-20 at %, wherein the sum of oxygen and nitrogen in the adhesion enhancing layer is 25-80 at %, and wherein the adhesion enhancing layer has a thickness of 1 Å to 15 Å,
• wherein the adhesion enhancing layer has a transition metal content different from that of the lower light shielding layer and the second light-shielding film, and
• wherein the multilayer light shielding pattern film has a pEA (for photomask, Edge side Area damaged) value of 2 nm2 or less according to Equation 2 below;
• pEA
• =
• pBC
• -
• p
• ⁢
• AC
• 2
• ⁢
• N
• [
• Equation
• ⁢
• 2
• ]
• wherein, in the Equation 2, the pBC value is a sectional area of the multilayer light shielding pattern film before cleaning is performed,
• wherein the pAC value is a sectional area of the multilayer light shielding pattern film measured after the photomask is soaked in SC-1 (Standard Cleaning-1) solution for 800 seconds and rinsed by ozone water,
• wherein the N value is the number of light shielding areas observed in the section of the photomask,
• wherein the SC-1 solution is a solution comprising NH4OH of 14.3% by weight, H2O2 of 14.3% by weight, and H2O of 71.4% by weight, and
• wherein the ozone water is a solution comprising an ozone concentration of 20 ppm (based on the weight) with ultrapure water as a solvent.

A manufacturing method of a semiconductor element, the method comprising:

• a preparation of disposing a light source, a photomask, and a semiconductor wafer where a resist film have been applied;
• an exposure operation of selectively transmitting a light incident from the light source to the semiconductor wafer through the photomask to be transferred;
• and
• a development operation of developing a pattern on the semiconductor wafer,
• wherein the photomask comprises a transparent substrate,
• wherein the transparent substrate comprises a light shielding area,
• wherein the photomask comprises a multilayer light shielding pattern film disposed on the light shielding area,
• wherein the multilayer light shielding pattern film comprises a transition metal and at least any one between oxygen and nitrogen,
• wherein the multilayer light shielding pattern film comprises a first light shielding film and a second light shielding film, disposed on the first light shielding film and having a different composition than the first light shielding film,
• wherein the first light shielding film comprises a lower light shielding layer and an adhesion enhancing layer on the lower light shielding layer, the adhesion enhancing layer including the transition metal in an amount of 30-60 at %, carbon in an amount of 7-20 at %, nitrogen in an amount of 7-20 at %, wherein the sum of oxygen and nitrogen in the adhesion enhancing layer is 25-80 at %, and wherein the adhesion enhancing layer has a thickness of 1 Å to 15 Å,
• wherein the adhesion enhancing layer has a transition metal content different from that of the lower light shielding layer and the second light-shielding film, and
• wherein the multilayer light shielding pattern film has a pEA (for photomask, Edge side Area damaged) value of 2 nm2 or less according to Equation 2 below;
• pEA
• =
• pBC
• -
• p
• ⁢
• AC
• 2
• ⁢
• N
• [
• Equation
• ⁢
• 2
• ]
• wherein, in the Equation 2, the pBC value is a sectional area of the multilayer light shielding pattern film measured before cleaning is performed,
• wherein the pAC value is a sectional area of the multilayer light shielding pattern film measured after the photomask is soaked in SC-1 (Standard Cleaning-1) solution for 800 seconds and rinsed by ozone water,
• wherein the N value is the number of light shielding areas observed in the section of the photomask,
• wherein the SC-1 solution is a solution comprising NH4OH of 14.3% by weight, H2O2 of 14.3% by weight, and H2O of 71.4% by weight, and
• wherein the ozone water is a solution comprising an ozone concentration of 20 ppm (based on the weight) with ultrapure water as a solvent.