Thin film lithium-containing photonics wafer having a trap-rich substrate
AssigneeHyperLight Corporation
InventorsFan Ye, Christian Reimer, Mian Zhang, Kevin Luke, Amirmahdi Honardoost
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Abstract
A substrate configured for an electro-optic device and an electro-optic device formed using the substrate are described. The substrate includes a semiconductor substrate, an insulating layer, and at least one thin film optical material. The semiconductor substrate includes a trap-rich layer and an underlying substrate layer. The insulating layer is on the semiconductor substrate, The trap-rich layer is between the underlying substrate layer and the insulating layer. The thin film optical material(s) have an electro-optic effect and are on the insulating layer.
Claims16
A substrate configured for a high-speed electro-optic device, comprising:
- a semiconductor substrate including a trap-rich layer and an underlying substrate layer;
- an insulating layer on the semiconductor substrate, the trap-rich layer being between the underlying substrate layer and the insulating layer, the insulating layer having a thickness of at least five micrometers and a thickness variation of less than ten percent of the thickness, at least a portion of the insulating layer being bonded to the semiconductor substrate;
- and
- at least one thin film optical material having an electro-optic effect and being on the insulating layer such that the insulating layer is between the trap-rich layer and the at least one thin film optical material, the at least one thin film optical material includes lithium,
- wherein the trap-rich layer is configured for wafer bonding.
A high-speed electro-optic device, comprising:
- a waveguide including at least one thin film electro-optic layer, the at least one electro-optic layer including lithium;
- and
- an electrode;
- wherein the waveguide and the electrode are on a substrate structure, the substrate structure including a semiconductor substrate and an insulating layer, the semiconductor substrate including a trap-rich layer and an underlying substrate layer, the insulating layer being on the semiconductor substrate and between the trap-rich layer and the at least one thin film electro-optic layer, the insulating layer having a thickness of at least five micrometers and a thickness variation of less than ten percent of the thickness, the trap-rich layer being between the underlying substrate layer and the insulating layer, the at least one thin film electro-optic layer being on the insulating layer, at least a portion of the insulating layer being bonded to the substrate structure;
- wherein the trap-rich layer is configured for wafer bonding.
A method for providing a high-speed electro-optic device, comprising:
- affixing an insulating layer to a semiconductor substrate including a trap-rich layer and an underlying substrate layer, the trap-rich layer being between the underlying substrate layer and the insulating layer, the insulating layer having a thickness of at least five micrometers and a thickness variation of less than ten percent of the thickness;
- and
- providing at least one thin film optical material having an electro-optic effect such that the insulating layer is between the at least one thin film optical material and the trap-rich layer, the at least one thin film optical material includes lithium;
- wherein the trap-rich layer is configured for wafer bonding.
Dependencies are inferred from the claim text.