Spin valve device with precious metal-free antiferromagnet in stabilization layer

A device having a spin valve layer sequence, wherein the spin valve layer sequence includes:

• a first magnetic layer having a variable direction of magnetization;
• a second magnetic layer having a fixed direction of magnetization;
• and
• a stabilization layer for stabilizing the fixed direction of magnetization of the second magnetic layer,
• wherein the stabilization layer includes a precious metal-free antiferromagnet, and
• wherein the second magnetic layer has two ferromagnetic sublayers, between which is disposed a coupling layer for antiferromagnetic coupling of the two ferromagnetic sublayers.

A device, comprising:

• a spin valve layer sequence, wherein the spin valve layer sequence includes a stabilization layer configured to stabilize a fixed direction of magnetization of a magnetic layer,
• wherein the magnetic layer includes two ferromagnetic sublayers, between which is disposed a coupling layer for antiferromagnetic coupling of the two ferromagnetic sublayers,
• wherein the stabilization layer is directly coupled to the magnetic layer, and
• wherein the stabilization layer contains or consists of manganese nitride.

A method of producing a device having a spin valve layer sequence, wherein the method comprises:

• forming a first magnetic layer of the spin valve layer sequence, the first magnetic layer having a variable direction of magnetization;
• forming a second magnetic layer of the spin valve layer sequence, the second magnetic layer having a fixed direction of magnetization;
• and
• forming a stabilization layer of the spin valve layer sequence, the stabilization layer configured to stabilize the fixed direction of magnetization of the second magnetic layer,
• wherein the stabilization layer is a precious metal-free antiferromagnet,
• wherein the stabilization layer is disposed above the second magnetic layer and above the first magnetic layer.