Synthesis and use of precursors for vapor deposition of tungsten containing thin films
AssigneeASM IP Holding B.V.
InventorsTimo Hatanpää, Miika Mattinen, Mikko Ritala, Markku Leskelä
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Abstract
Methods are provided for synthesizing W(IV) beta-diketonate precursors. Additionally, methods are provided for forming W containing thin films, such as WS2, WNx, WO3, and W via vapor deposition processes, such as atomic layer deposition (ALD) type processes and chemical vapor deposition (CVD) type processes. Methods are also provided for forming 2D materials containing W.
Claims17
A vapor deposition reactant comprising a tungsten compound, the tungsten compound comprising tungsten and at least one beta-diketonato ligand attached to the tungsten, wherein the tungsten has an oxidation state of +IV, wherein the beta-diketonato ligand is 2,2,6,6-tetramethyl-3,5-heptanedionato (thd) or 2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionato (fod).
A compound comprising tungsten and at least one beta-diketonato ligand attached to the tungsten, wherein tungsten has an oxidation state of +IV, wherein the beta-diketonato ligand is 2,2,6,6-tetramethyl-3,5-heptanedionato (thd) or 2,2-dimethyl-6,6,7,7,8,8,8-heptafluoro-3,5-octanedionato (fod).
A vapor deposition reactant comprising a tungsten compound, the tungsten compound comprising tungsten and two or three beta-diketonato ligands attached to the tungsten, wherein tungsten has an oxidation state of +IV, wherein the beta-diketonato ligand is selected from trifluoroacetylacetonato (tfac), and hexafluoroacetylacetonato (hfac).
Dependencies are inferred from the claim text.