Film formation method

Abstract

A film formation method having an excellent mass productivity, whereby a time required for forming a film having a desired thickness is short. The film formation method uses one aqueous solution or different aqueous solutions containing at least one of a metal complex having two or more different ligands and a metal complex having same ligands and substituents as well as a gallium compound, in which the metal complex having the two or more different ligands has nitrogen atom, and the metal complex having the same ligands and substituents has a halogen atom, and the method includes atomizing or dropletizing one aqueous solution or different aqueous solutions, conveying resulting mist or droplets to a base by a carrier gas, and forming a metal oxide film on the base by thermally reacting the mist or droplets in the vicinity of the base.

Dependencies are inferred from the claim text.