Semiconductor device and circuit device

A semiconductor device comprising:

• a first semiconductor chip including a first MOSFET of p-type and a first parasitic diode formed in the first MOSFET;
• and
• a second semiconductor chip including a second MOSFET of n-type and a second parasitic diode formed in the second MOSFET,
• wherein a first source electrode and a first gate wiring are formed on a front surface of the first semiconductor chip,
• wherein a first drain electrode is formed on a back surface of the first semiconductor chip,
• wherein a first anode of the first parasitic diode is coupled to the first drain electrode, and a first cathode of the first parasitic diode is coupled to the first source electrode,
• wherein a second source electrode and a second gate wiring are formed on a front surface of the second semiconductor chip,
• wherein a second drain electrode is formed on a back surface of the second semiconductor chip,
• wherein a second anode of the second parasitic diode is coupled to the second source electrode, and a second cathode of the second parasitic diode is coupled to the second drain electrode,
• wherein the back surface of the second semiconductor chip and the front surface of the first semiconductor chip face each other such that the second drain electrode and the first source electrode come into contact with each other via a conductive member, and
• wherein the first gate wiring is directly and electrically fixed to a ground potential.