Power semiconductor module arrangement and method for producing the same
AssigneeInfineon Technologies AG
InventorsMarianna Nomann, Elena Zwar
Life of this patent
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Abstract
A power semiconductor module arrangement comprises a substrate comprising a dielectric insulation layer, and a first metallization layer attached to the dielectric insulation layer, at least one semiconductor body mounted on the first metallization layer, and a first layer comprising an encapsulant, the first layer being arranged on the substrate and covering the first metallization layer the at least one semiconductor body, wherein the first layer is configured to release liquid or oil at temperatures exceeding a defined threshold temperature.
Claims11
A power semiconductor module arrangement comprising:
- a substrate comprising a dielectric insulation layer, and a first metallization layer attached to the dielectric insulation layer;
- at least one semiconductor body mounted on the first metallization layer;
- and
- a first layer comprising an encapsulant, the first layer being arranged on the substrate and covering the first metallization layer and the at least one semiconductor body, wherein the first layer is configured to release liquid or oil at temperatures exceeding a defined threshold temperature.
A method comprising:
- arranging at least one semiconductor body on a substrate, the substrate comprising a dielectric insulation layer, and a first metallization layer attached to the dielectric insulation layer;
- and
- forming a first layer on the substrate, thereby covering the first metallization layer and the at least one semiconductor body, the first layer comprising an encapsulant, wherein
- the first layer is configured to release liquid or oil at temperatures exceeding a defined threshold temperature.
Dependencies are inferred from the claim text.