Semiconductor device

A semiconductor device, comprising:

• a dielectric layer having a first surface and a second surface opposite to the first surface, wherein
• the dielectric layer comprises a plurality of dielectric films staked on one another;
• a first interconnection layer over the first surface of the dielectric layer;
• a second interconnection layer over the second surface of the dielectric layer;
• a passivation layer disposed between the second interconnection layer and the dielectric layer;
• a plurality of electrical conductors over the second surface of the dielectric layer;
• and
• a plurality of conductive structures through the dielectric films of the dielectric layer and the passivation layer, and electrically connected to the first interconnection layer and the second interconnection layer,
• wherein each of the conductive structures has a first end proximal to the first interconnection layer and a second end proximal to the second interconnection layer, and a width of the first end is less than a width of the second end.

A semiconductor device, comprising:

• a first interconnection layer, wherein the first interconnection layer comprises at least a conductive layer;
• a second interconnection layer;
• a first dielectric layer and a second dielectric layer between the first interconnection layer and the second interconnection layer;
• and
• a conductive structure through the first dielectric layer and the second dielectric layer, and electrically connected to the first interconnection layer and the second interconnection layer,
• wherein sidewalls of the conductive layer of the first interconnection layer are separated from the first dielectric layer and the second dielectric layer,
• wherein the conductive structure has a first end proximal to the first interconnection layer and a second end proximal to the second interconnection layer, and a width of the first end is less than a width of the second end.