Replacement conductive material for interconnect features

A semiconductor device comprising:

• a device layer comprising one or more devices;
• a first dielectric layer above the device layer;
• a first recess above the first dielectric layer within a second dielectric layer, such that a bottom surface of the first recess is directly on a top surface of the first dielectric layer;
• a second recess within a third dielectric layer, and landing on only a portion of the first recess;
• a conformal continuous layer lining (i) sidewalls, top surface, and the bottom surface of the first recess, and (ii) sidewalls of the second recess;
• and
• monolithic conductive material within the first and second recesses.

A method of forming interconnect features in an integrated circuit, comprising:

• forming a device layer comprising one or more devices;
• forming a first dielectric layer above the device layer;
• forming a first recess within a first interconnect layer, the first interconnect layer being above the first dielectric layer such that a top surface of the first dielectric layer is exposed at the bottom of the first recess;
• depositing sacrificial material within the first recess and directly on the top surface of the first dielectric layer;
• forming a second interconnect layer over the first interconnect layer;
• forming a second recess within the second interconnect layer that is above the first interconnect layer, wherein the second recess abuts the first recess and is conjoined with the first recess through an opening in the first recess;
• removing the sacrificial material from the first recess, through the opening and the second recess;
• conformally forming a layer on the walls of the first recess and the second recess;
• and
• depositing conductive material in the first recess and the second recess that are lined with the conformal layer.