Interconnect with redeposited metal capping and method forming same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorHsiang-Wei Lin
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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorHsiang-Wei Lin
Estimating the term…
A method includes forming a first conductive feature in a first dielectric layer, forming a first metal cap over and contacting the first conductive feature, forming an etch stop layer over the first dielectric layer and the first metal cap, forming a second dielectric layer over the etch stop layer; and etching the second dielectric layer and the etch stop layer to form an opening. The first conductive feature is exposed to the opening. The method further includes selectively depositing a second metal cap at a bottom of the opening, forming an inhibitor film at the bottom of the opening and on the second metal cap, selectively depositing a conductive barrier in the opening, removing the inhibitor film, and filling remaining portions of the opening with a conductive material to form a second conductive feature.
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Dependencies are inferred from the claim text.