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US 12,564,024 B2Granted
Semiconductor arrangement and method of making
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Ting Tsai, Chung-Liang Cheng, Ching-Jing Wu, Chyi-Tsong Ni
Life of this patent
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Abstract
A semiconductor arrangement is provided. The semiconductor arrangement includes a dielectric layer defining an opening, an adhesion layer in the opening, and a conductive layer in the opening over the adhesion layer. A material of the conductive layer is a same material as an adhesion material of the adhesion layer.
Claims20
A semiconductor arrangement, comprising:
- a conductive feature;
- a dielectric layer defining an opening;
- an adhesion layer in the opening and directly contacting the conductive feature, wherein at an interface of the conductive feature and the adhesion layer, a ratio of oxygen to a material of the conductive feature is less than 1:2;
- and
- a conductive layer in the opening over the adhesion layer and overlying the conductive feature, wherein a material of the conductive layer is a same material as an adhesion material of the adhesion layer.
2 more elements
A semiconductor arrangement, comprising:
- a first dielectric layer;
- a second dielectric layer between a first sidewall of the first dielectric layer and a second sidewall of the first dielectric layer;
- a conductive feature overlying the second dielectric layer and between the first sidewall of the first dielectric layer and the second sidewall of the first dielectric layer;
- an adhesion layer overlying the conductive feature, wherein the adhesion layer comprises:
- a first adhesion coating in direct contact with the conductive feature, wherein at an interface of the conductive feature and the first adhesion coating, a ratio of oxygen to a material of the conductive feature is less than 1:2;
- and
- a second adhesion coating overlying the first adhesion coating;
- and
- a conductive layer overlying the second adhesion coating.
6 more elements
A semiconductor arrangement, comprising:
- a first dielectric layer defining an opening;
- an adhesion layer in the opening, wherein the adhesion layer comprises:
- a first adhesion coating;
- and
- a second adhesion coating overlying the first adhesion coating;
- and
- a conductive layer in the opening overlying the adhesion layer such that a sidewall of the conductive layer is laterally separated from a sidewall of the first dielectric layer by the first adhesion coating and the second adhesion coating;
- and
- a conductive feature underlying the adhesion layer and in direct contact with the first adhesion coating, wherein at an interface of the conductive feature and the first adhesion coating, a ratio of oxygen to a material of the conductive feature is less than 1:2.
6 more elements
Dependencies are inferred from the claim text.