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US 12,564,020 B2Granted
Pattern forming method, semiconductor device manufacturing method, and pattern forming apparatus
AssigneeKioxia Corporation
InventorSatoshi Mitsugi
Life of this patent
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Abstract
According to one embodiment, a pattern forming method includes forming a first resin pattern on a substrate with a first resin. The first resin pattern includes a first transfer pattern and a first mark. A second resin is dispensed to cover the first mark of the first resin pattern. A first pattern is formed including the first transfer pattern and the second resin covering the first mark. The first pattern is then transferred to a first process film on the substrate.
Claims17
A pattern forming method, comprising:
- forming a first resin pattern on a substrate using a first resin, the first resin pattern including a first transfer pattern and a first mark;
- dispensing a second resin to cover the first mark of the first resin pattern;
- forming a first pattern including the first transfer pattern and the second resin covering the first mark;
- and
- transferring the first transfer pattern to a first process film on the substrate.
2 more elements
A semiconductor device manufacturing method comprising:
- imprinting a first resin pattern including a transfer pattern and a first mark on a first process layer of a semiconductor substrate using a first resin;
- covering the first mark of the first resin pattern on the first process layer with a second resin;
- and
- transferring a first pattern to the first process layer by etching portions of the first process layer using the first resin and the second resin as an etch mask, the first pattern including the transfer pattern of the first resin pattern but not the first mark.
1 more element
Dependencies are inferred from the claim text.