Light-emitting metal-oxide-semiconductor devices and associated systems, devices, and methods
AssigneeMicron Technology, Inc.
InventorsMartin F. Schubert, Vladimir Odnoblyudov
Life of this patent
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Abstract
Various embodiments of solid state transducer (“SST”) devices are disclosed. In several embodiments, a light emitter device includes a metal-oxide-semiconductor (MOS) capacitor, an active region operably coupled to the MOS capacitor, and a bulk semiconductor material operably coupled to the active region. The active region can include at least one quantum well configured to store first charge carriers under a first bias. The bulk semiconductor material is arranged to provide second charge carriers to the active region under the second bias such that the active region emits UV light.
Claims20
A light emitting device, comprising:
- a semiconductor structure including:
- a first region having a first side and a second side opposite to the first side;
- and
- a second region connected to the second side of the first region;
- a dielectric layer at the first side of the first region;
- a first contact connected to the dielectric layer;
- and
- a second contact connected to the second region,
- wherein the first region is configured to emit electromagnetic radiation in response to a bias signal applied across the first and second contacts, and
- wherein the bias signal includes a first duration at a first voltage and a second duration at a second voltage different than the first voltage.
A solid state transducer (SST) system, comprising:
- a light emitting device including:
- a semiconductor structure having:
- a first region having a first side and a second side opposite to the first side, and
- a second region connected to the second side of the first region;
- a dielectric layer at the first side of the first region;
- a first contact connected to the dielectric layer;
- and
- a second contact connected to the second region;
- and
- a signal generator operably coupled to the first contact and to the second contact, the signal generator configured to generate a bias signal across the first and second contacts to cause the first region of the semiconductor structure to emit electromagnetic radiation,
- wherein the bias signal includes a first duration at a first voltage and a second duration at a second voltage different than the first voltage.
A light emitting device, comprising:
- a semiconductor structure including:
- an active region having a first side and a second side opposite to the first side, and
- a bulk region connected to the second side of the active region;
- a dielectric layer at the first side of the active region;
- a first contact connected to the dielectric layer;
- and
- a second contact connected to the bulk region,
- wherein the active region is configured to emit ultraviolet (UV) light in response to a bias signal applied across the first and second contacts,
- wherein the bias signal the bias signal includes a first duration at a first voltage and a second duration at a second voltage different than the first voltage.
Dependencies are inferred from the claim text.