Photodiode element and sensor and electronic device
AssigneeSamsung Electronics Co., Ltd.
InventorsGae Hwang Lee, Hyun Bum Kang, Youngjun Yun, Jong Won Chung
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Abstract
Disclosed are a photodiode element, and a sensor and an electronic device including the same. The photodiode element includes a first electrode, a second electrode facing the first electrode, a photoelectric conversion layer between the first electrode and the second electrode and having an absorption spectrum in a first wavelength spectrum, a light-emitting layer between the photoelectric conversion layer and the second electrode and having an emission peak wavelength belonging to the first wavelength spectrum, and a first charge transport layer between the photoelectric conversion layer and the light-emitting layer.
Claims36
A photodiode element, comprising:
- a first electrode;
- a second electrode facing the first electrode;
- a photoelectric conversion layer between the first electrode and the second electrode, an absorption spectrum of the photoelectric conversion layer corresponding to a first wavelength spectrum;
- a light-emitting layer between the photoelectric conversion layer and the second electrode, an emission peak wavelength of the light-emitting layer being within the first wavelength spectrum;
- and
- a first charge transport layer between the photoelectric conversion layer and the light-emitting layer,
- wherein one of the first electrode or the second electrode is configured to operate an anode of the photodiode element and the other is configured to operate a cathode of the photodiode element, the anode and the cathode being a pair of electrodes configured to have a bias voltage applied, and
- the photodiode element is a photoelectric conversion element configured to absorb light and convert the light into an electrical signal.
A photodiode element, comprising
- a first electrode;
- a second electrode facing the first electrode;
- a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer comprising a light absorbing material;
- and
- a light-emitting layer between the photoelectric conversion layer and the second electrode, the light-emitting layer comprising a light-emitting material,
- wherein, as a bias between the first electrode and the second electrode increases, an external quantum efficiency of the photodiode element increases, and
- an external quantum efficiency of the photodiode element is greater than 100%.
A photodiode element, comprising:
- a photoelectric conversion layer, an absorption spectrum of the photoelectric conversion layer corresponding to a first wavelength spectrum having a first measure of statistical dispersion;
- and
- a light-emitting layer on the photoelectric conversion layer, an emission spectrum of the light-emitting layer corresponding to a second wavelength spectrum having a second measure of dispersion, the second measure of statistical dispersion less than the first measure of statistical dispersion.
Dependencies are inferred from the claim text.