Semiconductor device and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKai-Qiang Wen, Shih-Fen Huang, Shih-Chun Fu, Chi-Yuan Shih, Feng Yuan, Wan-Lin Tsai, Chung-Liang Cheng
Life of this patent
Estimating the term…
Abstract
Embodiments include a FinFET transistor including an embedded resistor disposed in the fin between the source epitaxial region and the source contact. A control contact may be used to bias the embedded resistor, thereby changing the resistivity of the resistor. Edge gates of the FinFET transistor may be replaced with insulating structures. Multiple ones of the FinFET/embedded resistor combination may be utilized together in a common drain/common source contact design.
Claims20
A method comprising:
- forming a fin field-effect transistor (FinFET), the FinFET comprising a fin comprising a semiconductor material, a transistor gate disposed over a channel region of the fin, a source epitaxial region embedded in the fin at a first side of the transistor gate, and a drain epitaxial region embedded in the fin at a second side of the transistor gate;
- forming a first resistor embedded in the fin between the source epitaxial region and a first epitaxial region;
- and
- disposing a first gate structure over the first resistor, the source epitaxial region embedded in the fin at a second side of the first gate structure, the first epitaxial region embedded in the fin at a first side of the first gate structure.
A method comprising:
- doping a fin with a first conductivity type, the fin comprising a semiconductor material;
- doping the fin with a second conductivity type, thereby forming a first well in the fin of the second conductivity type;
- forming a first gate structure and a second gate structure over the fin, the first gate structure and the second gate structure oriented perpendicular to a lengthwise direction of the fin, the first gate structure covering a portion of the fin with the first conductivity type and the second gate structure covering a portion of the fin with the second conductivity type;
- forming a first epitaxial region in the fin at a first side of the first gate structure, a second epitaxial region in the fin interposed between the first gate structure and the second gate structure, and a third epitaxial region in the fin at a second side of the second gate structure;
- and
- forming a first contact to the first epitaxial region, a second contact to the first gate structure, and a third contact to the third epitaxial region, the second epitaxial region being free from a contact thereto.
A method comprising:
- forming a fin extending from a substrate;
- forming a first gate structure over a first channel of the fin;
- forming a second gate structure over a second channel of the fin;
- forming a first epitaxial region embedded in the fin adjacent the first gate structure at a first side of the first gate structure;
- forming a second epitaxial region embedded in the fin adjacent the first gate structure at a second side of the first gate structure;
- and
- forming a third epitaxial region embedded in the fin adjacent the second gate structure at a second side of the second gate structure, wherein the first epitaxial region, the second epitaxial region, the third epitaxial region, and the second channel of the fin each have a first conductivity type, wherein the first channel has a second conductivity type opposite the first conductivity type.
Dependencies are inferred from the claim text.