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US 12,562,716 B2Granted
Single substrate multiplexer
AssigneeRF360 Singapore Pte. Ltd.
InventorsFlorian Habel, Thomas Bauer, Peter Hagn, Thomas Dengler
Life of this patent
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Abstract
At least three acoustic filters circuits FC are arranged on a single chip CH. At least two of them are electrically connected already on the chip for multiplexing. This reduces space consumption and leads to smaller device size.
Claims17
An apparatus, comprising:
- a layer stack comprising:
- a carrier substrate;
- a piezoelectric layer disposed above the carrier substrate;
- at least one dielectric layer arranged between the piezoelectric layer and the carrier substrate;
- a trap-rich layer arranged between the carrier substrate and the piezoelectric layer, wherein the trap-rich layer comprises polycrystalline silicon;
- and
- a metallization disposed on or above the piezoelectric layer, comprising:
- an antenna terminal;
- and
- electrode structures forming at least three surface acoustic wave (SAW) filter circuits connected in parallel between the antenna terminal and a respective signal pad, wherein each SAW filter circuit of the at least three SAW filter circuits comprises a corresponding series signal line and a corresponding plurality of SAW resonators connected in series with or parallel to the corresponding series signal line;
- and
- a package providing a cavity on top of the layer stack formed between the piezoelectric layer and at least one of a lid or a cover, wherein the electrode structures forming the at least three SAW filter circuits are enclosed in the cavity.
9 more elements
An apparatus, comprising:
- a multiplexer comprising at least three surface acoustic wave (SAW) filter circuits each coupled to a common antenna terminal and formed together on a single chip, the single chip comprising:
- a carrier substrate;
- a piezoelectric layer disposed above the carrier substrate;
- at least one dielectric layer arranged between the piezoelectric layer and the carrier substrate;
- a trap-rich layer arranged between the carrier substrate and the piezoelectric layer, wherein the trap-rich layer comprises polycrystalline silicon;
- and
- a metallization disposed on or above the piezoelectric layer, comprising:
- the common antenna terminal;
- and
- electrode structures forming the at least three SAW filter circuits, wherein each of the at least three SAW filter circuits is formed from a corresponding plurality of SAW resonators.
7 more elements
Dependencies are inferred from the claim text.