Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsJeong Yeol Bae, Jong Soo Lee, Duk Soo Kim, Eui Bong Yang
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AssigneeSamsung Electronics Co., Ltd.
InventorsJeong Yeol Bae, Jong Soo Lee, Duk Soo Kim, Eui Bong Yang
Estimating the term…
A semiconductor device includes a first Low Noise Amplifier (LNA), a second LNA, first and second receiving circuits, an a radio frequency multiplexer. The first LNA is connected to a first receiving port, and the second LNA is connected to a second receiving port different from the first receiving port. The first receiving circuit includes a first transformer and processes one or more outputs of the first and second LNAs. The second receiving circuit processes one or more of the outputs of the first and second LNAs. The radio frequency multiplexer controls connection between the first and second LNAs and the first and second receiving circuits. The first receiving circuit includes a first variable capacitor having a first end connected to an output of the radio frequency multiplexer and a second end connected to the first transformer.
A semiconductor device comprising:
A semiconductor device comprising:
A semiconductor device comprising:
Dependencies are inferred from the claim text.